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dc.contributor.author황현상-
dc.date.accessioned2018-06-19T00:40:47Z-
dc.date.available2018-06-19T00:40:47Z-
dc.date.created2015-02-27-
dc.date.issued2014-10-28-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/69052-
dc.publisher한국반도체연구조합-
dc.relation.isPartOf2014 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)-
dc.titleEffect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2014 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)-
dc.citation.conferencePlaceKO-
dc.citation.title2014 14th Non-Volatile Memory Technology Symposium (NVMTS 2014)-
dc.contributor.affiliatedAuthor황현상-
dc.description.journalClass1-
dc.description.journalClass1-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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