Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Study on the Effect of Oxygen Vacancy Modulation of Tunnel Barrier and Switching Layer of ReRAM on Low Leakage current and Voltage Symmetry for ReRAM Cross-point Array
- Title
- Study on the Effect of Oxygen Vacancy Modulation of Tunnel Barrier and Switching Layer of ReRAM on Low Leakage current and Voltage Symmetry for ReRAM Cross-point Array
- Authors
- 황현상
- Date Issued
- 2015-07-01
- Publisher
- University of Udine
- Article Type
- Conference
- Citation
- 19th Conference on "Insulating Films on Semiconductors"(infos 2015), 2015-07-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg