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dc.contributor.author김종규-
dc.contributor.author김동영-
dc.contributor.author황선용-
dc.contributor.author박준혁-
dc.date.accessioned2018-06-19T04:15:29Z-
dc.date.available2018-06-19T04:15:29Z-
dc.date.created2016-03-08-
dc.date.issued2015-11-09-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/71814-
dc.publisherISGN-
dc.relation.isPartOfThe 6th International Symposium on Growth of III-Nitrides (ISGN-6)-
dc.titlePolarization-Engineered High-Efficiency III-Nitride-based Light-Emitting Diodes Optimized by Genetic Algorithm-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 6th International Symposium on Growth of III-Nitrides (ISGN-6)-
dc.citation.titleThe 6th International Symposium on Growth of III-Nitrides (ISGN-6)-
dc.contributor.affiliatedAuthor김종규-
dc.contributor.affiliatedAuthor김동영-
dc.contributor.affiliatedAuthor황선용-
dc.contributor.affiliatedAuthor박준혁-
dc.description.journalClass1-
dc.description.journalClass1-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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