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Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications

Title
Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications
Authors
이정수
Date Issued
2016-06-14
Publisher
NANO KOREA
URI
https://oasis.postech.ac.kr/handle/2014.oak/72365
Article Type
Conference
Citation
NANO KOREA 2016 Symposium, 2016-06-14
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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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