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dc.contributor.author정윤하-
dc.date.accessioned2018-06-19T08:31:28Z-
dc.date.available2018-06-19T08:31:28Z-
dc.date.created2009-03-27-
dc.date.issued2007-09-18-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/72529-
dc.publisherIEEE-
dc.relation.isPartOf2007 International Conference on Solid State Devices and Materials (SSDM 2007)-
dc.relation.isPartOfInternational Conference on Solid State Devices and Materials proceeding-
dc.titleEffects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2007 International Conference on Solid State Devices and Materials (SSDM 2007), pp.718 - 719-
dc.citation.conferenceDate2007-09-18-
dc.citation.conferencePlaceJA-
dc.citation.endPage719-
dc.citation.startPage718-
dc.citation.title2007 International Conference on Solid State Devices and Materials (SSDM 2007)-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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