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Misfitstrain and Growth Characteristics of InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy
- Title
- Misfitstrain and Growth Characteristics of InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy
- Authors
- 박찬경
- Date Issued
- 2006-10-22
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE Nanotechnology Materials and Devices Conference, 2006-10-22
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg