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The Electrical Properties of Ru/Ta2O5/Si Prepared by Atomic Layer Deposition for Device Fabrication
- Title
- The Electrical Properties of Ru/Ta2O5/Si Prepared by Atomic Layer Deposition for Device Fabrication
- Authors
- 김형준
- Date Issued
- 2006-09-01
- Article Type
- Conference
- Citation
- 3rd International Symposium on Advanced Gate Stack Technology (ISAGST) 27-29, 2006-09-01
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Related Researcher
- 김형준KIM, HYUNGJUN
- Dept of Materials Science & Enginrg