Atomic layer chemical vapor deposition and characterization of Hf-silicate, Hf-silicate/Al2O3 and Hf-silicate/SiO2 gate dielectrics
- Title
- Atomic layer chemical vapor deposition and characterization of Hf-silicate, Hf-silicate/Al2O3 and Hf-silicate/SiO2 gate dielectrics
- Authors
- 용기중
- Date Issued
- 2005-10-31
- Publisher
- AVS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/72968
- Article Type
- Conference
- Citation
- American Vacuum Society 52nd Symposium, 2005-10-31
- Files in This Item:
- There are no files associated with this item.
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