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The IMD sweet spots varied with gate bias voltages and input powers in RF LDMOS power amplifiers

Title
The IMD sweet spots varied with gate bias voltages and input powers in RF LDMOS power amplifiers
Authors
정윤하
Date Issued
2003-10-01
Publisher
European Microwave Conference
URI
https://oasis.postech.ac.kr/handle/2014.oak/73868
Article Type
Conference
Citation
33rd European Microwave Conference - Munich 2003, page. 1353 - 1356, 2003-10-01
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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