Effect of Isoelectronic Al-doping in GaN films Grown by Metal Organic Chemical Vapor Deposition
- Title
- Effect of Isoelectronic Al-doping in GaN films Grown by Metal Organic Chemical Vapor Deposition
- Authors
- 이종람
- Date Issued
- 2003-02-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/74113
- Article Type
- Conference
- Citation
- 제 10회 반도체 학술대회, page. 415 - 416, 2003-02-01
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- There are no files associated with this item.
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