Fabrication of AlGaN/GaN heterostructure field effect transistor using pre-oxidation process.
- Title
- Fabrication of AlGaN/GaN heterostructure field effect transistor using pre-oxidation process.
- Authors
- 이종람
- Date Issued
- 2002-12-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/74171
- Article Type
- Conference
- Citation
- 2002 Fall Materials Research Symposium, 2002-12-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.