Change of microstructure and chemical bonding states at Pt/p-type GaN interface with annealing and its effects on contact resistivity
- Title
- Change of microstructure and chemical bonding states at Pt/p-type GaN interface with annealing and its effects on contact resistivity
- Authors
- 이종람
- Date Issued
- 2002-02-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/74484
- Article Type
- Conference
- Citation
- 제 9회 한국반도체 학술대회, 2002-02-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.