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dc.contributor.author이규철-
dc.date.accessioned2018-06-21T05:24:25Z-
dc.date.available2018-06-21T05:24:25Z-
dc.date.created2009-03-27-
dc.date.issued2004-09-12-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/75040-
dc.publisherInternational Symposium on Compound Semiconductors-
dc.relation.isPartOfThe 31-st International Symposium on Compound Semiconductors (ISCS-2003)-
dc.relation.isPartOfThe 31st International Symposium on Compound Semiconductors-
dc.titleHigh performance ZnO nanorod field effect transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 31-st International Symposium on Compound Semiconductors (ISCS-2003), pp.252 - 253-
dc.citation.conferenceDate2004-09-12-
dc.citation.conferencePlaceKO-
dc.citation.endPage253-
dc.citation.startPage252-
dc.citation.titleThe 31-st International Symposium on Compound Semiconductors (ISCS-2003)-
dc.contributor.affiliatedAuthor이규철-
dc.description.journalClass2-
dc.description.journalClass2-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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