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dc.contributor.author이시우-
dc.date.accessioned2018-06-21T07:30:55Z-
dc.date.available2018-06-21T07:30:55Z-
dc.date.created2009-03-27-
dc.date.issued2003-01-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/77047-
dc.publisherThe Electrochem. Soc-
dc.relation.isPartOfProc. of the 203rd Int. Conf. on CVD and EUROCVD-
dc.relation.isPartOfProc. of the 203rd Int. Conf. on CVD and EUROCVD-
dc.titleCopper Dots Deposition Using New Precursors [Cu(I)(hfac)]2(DVTMSO) and [Cu(I)(hfac)]2(HD)-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationProc. of the 203rd Int. Conf. on CVD and EUROCVD, pp.1305-
dc.citation.conferenceDate2003-04-27-
dc.citation.conferencePlaceFR-
dc.citation.startPage1305-
dc.citation.titleProc. of the 203rd Int. Conf. on CVD and EUROCVD-
dc.contributor.affiliatedAuthor이시우-
dc.description.journalClass1-
dc.description.journalClass1-

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