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MOCVD of ZrO2 Thin Film using Zr(DMAE)4 as a precursor for High-k Dielectrics
- Title
- MOCVD of ZrO2 Thin Film using Zr(DMAE)4 as a precursor for High-k Dielectrics
- Authors
- 이시우
- Date Issued
- 2000-10-27
- Publisher
- 대한금속재료학회
- Article Type
- Conference
- Citation
- 대한금속재료학회, page. 238, 2000-10-27
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