구리촉매를 이용한 4족 원소 나노선의 고상촉매합성법

Abstract

In this paper, we compared kinetics of VLS growth and VSS growth of group IV semiconductor nanowires. By using Cu as solid catalyst, we can synthesize Si and Ge nanowires below their Eutectic temperature. We discovered that activation energies for nanowires growth by solid-catalytic growth are higher than by liquid-catalytic growth. From kinetics analysis, we suppose that diffusion of Si or Ge atoms through catalysts is not rate-limiting step but surface chemical reaction of precursors or incorporation of Si or Ge adatoms.