Arsenic Precipitation Behavior in In GaAs/GaAs Superlattices Growth by Low Temperature Molecular Beam Epitaxy
- Title
- Arsenic Precipitation Behavior in In GaAs/GaAs Superlattices Growth by Low Temperature Molecular Beam Epitaxy
- Authors
- 박찬경
- Date Issued
- 1996-04-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/80898
- Article Type
- Conference
- Citation
- MRS Spring Meeting 1996, page. 46, 1996-04-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.