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Boron Surface Segregation and Film Growth Kinetics during Ultra Highly Doped Si1-xGex(001):B Gas-Source Molecular Beam Epitaxy
- Title
- Boron Surface Segregation and Film Growth Kinetics during Ultra Highly Doped Si1-xGex(001):B Gas-Source Molecular Beam Epitaxy
- Authors
- 김형준
- Date Issued
- 2001-05-01
- Publisher
- Material Research Society
- Article Type
- Conference
- Citation
- Materials Research Society Spring Meeting, 2001-05-01
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Related Researcher
- 김형준KIM, HYUNGJUN
- Dept of Materials Science & Enginrg