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Characterization of deep levels in oxygen implanted silicon wafers by capacitive deep level transient spectroscopy
- Title
- Characterization of deep levels in oxygen implanted silicon wafers by capacitive deep level transient spectroscopy
- Authors
- 강봉구
- Date Issued
- 1997-09-30
- Publisher
- The 1997 Joint International Meeting of the Electrochemical Society
- Article Type
- Conference
- Citation
- The 1997 Joint International Meeting of the Electrochemical Society, 1997-09-30
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg