Fabrication of T-gate AlGaN/GaN heterostructure field effect transistor with thermally-stable Schottky contact
- Title
- Fabrication of T-gate AlGaN/GaN heterostructure field effect transistor with thermally-stable Schottky contact
- Authors
- 이종람
- Date Issued
- 2002-07-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/82200
- Article Type
- Conference
- Citation
- International Workshop on Nitride Semiconductors, 2002-07-01
- Files in This Item:
- There are no files associated with this item.
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