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dc.contributor.author이규철-
dc.date.accessioned2018-06-21T13:27:14Z-
dc.date.available2018-06-21T13:27:14Z-
dc.date.created2009-03-27-
dc.date.issued1998-01-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/82410-
dc.publisherThe 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)-
dc.relation.isPartOfThe 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)-
dc.relation.isPartOfThe 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)-
dc.titleBehavior of 2.8- and 3.2-eV Photoluminescence Bands in Mg-doped GaN at Different Temperatures and Excitation Densities-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)-
dc.citation.titleThe 9-th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)-
dc.contributor.affiliatedAuthor이규철-
dc.description.journalClass1-
dc.description.journalClass1-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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