GaAs/InGaAs Heterostructure FETs with 1.6W Outpust Power at 1GHz
- Title
- GaAs/InGaAs Heterostructure FETs with 1.6W Outpust Power at 1GHz
- Authors
- 김범만
- Date Issued
- 1995-01-01
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/83003
- Article Type
- Conference
- Citation
- IEEE MTT-S Digest, page. 453 - 456, 1995-01-01
- Files in This Item:
- There are no files associated with this item.
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