Electrical Properties of Plasma-Enhanced Atomic Layer Deposition HfO2/HfOxNy/HfO2 Gate Oxide
- Title
- Electrical Properties of Plasma-Enhanced Atomic Layer Deposition HfO2/HfOxNy/HfO2 Gate Oxide
- Authors
- 김형준
- Publisher
- American Vacuum Society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/83913
- Article Type
- Conference
- Citation
- AVS 55th International Symposium & Exhibition
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- There are no files associated with this item.
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