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Characteristic of the heteroepitaxial SixGe1-x films grown by RTCVD method
- Title
- Characteristic of the heteroepitaxial SixGe1-x films grown by RTCVD method
- Authors
- 강봉구
- Date Issued
- 1995-01-01
- Publisher
- 2nd Korea-China Sym. on Ion Beam Modification of Materials and Thin Film Materials
- Article Type
- Conference
- Citation
- 2nd Korea-China Sym. on Ion Beam Modification of Materials and Thin Film Materials, 1995-01-01
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg