Application of slow positron beam to the characterization of point defects in impurity-doped GaAs
- Title
- Application of slow positron beam to the characterization of point defects in impurity-doped GaAs
- Authors
- 이종람
- Date Issued
- 1991-01-01
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/85264
- Article Type
- Conference
- Citation
- The 2nd Workshop on Researches using Positrons, page. 79 - 92, 1991-01-01
- Files in This Item:
- There are no files associated with this item.
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