Si-delta-doped InxGa1-xAs/Al0.25Ga0.75As (x=0.15-0.28) low noise P-HEMTs grown by LP-MOCVD
- Title
- Si-delta-doped InxGa1-xAs/Al0.25Ga0.75As (x=0.15-0.28) low noise P-HEMTs grown by LP-MOCVD
- Authors
- 정윤하
- Date Issued
- 1994-12-17
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/86614
- Article Type
- Conference
- Citation
- IEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award, 1994-12-17
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- There are no files associated with this item.
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