Characteristics of enhancement mode InP MISFETs with sulfide passivation and P3N5 gate insulator by photo-CVD technology
- Title
- Characteristics of enhancement mode InP MISFETs with sulfide passivation and P3N5 gate insulator by photo-CVD technology
- Authors
- 정윤하
- Date Issued
- 1994-11-19
- Publisher
- The Institute of Electronics Engineering of Korea
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/86631
- Article Type
- Conference
- Citation
- Conference of KITE, Yeonse Univ., 1994-11-19
- Files in This Item:
- There are no files associated with this item.
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