Fabrication and characterization of the silicon oxide films by using slow O2+ ions
- Title
- Fabrication and characterization of the silicon oxide films by using slow O2+ ions
- Authors
- 정진욱
- Date Issued
- 1992-09-01
- Publisher
- Photon Factory, Tsukuba, Japan
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/86713
- Article Type
- Conference
- Citation
- ISSP Seminar, 1992-09-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.