Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정윤하 | - |
| dc.date.accessioned | 2018-06-22T04:58:09Z | - |
| dc.date.available | 2018-06-22T04:58:09Z | - |
| dc.date.created | 2009-03-27 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/88151 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | IEEE Nanotechnology Materials and Devices Conference 2008 | - |
| dc.relation.isPartOf | IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC 2008) | - |
| dc.title | 35 nm T-gate Double Delta Doped In0.52Al0.48As/In0.53Ga0.47As Metamorhpic GaAs HEMTs With an Ultrahigh fmax of 620 GHz | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | IEEE Nanotechnology Materials and Devices Conference 2008, pp.143 | - |
| dc.citation.conferenceDate | 2008-10-20 | - |
| dc.citation.startPage | 143 | - |
| dc.citation.title | IEEE Nanotechnology Materials and Devices Conference 2008 | - |
| dc.contributor.affiliatedAuthor | 정윤하 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg