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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정윤하 | - |
| dc.date.accessioned | 2018-06-22T04:58:13Z | - |
| dc.date.available | 2018-06-22T04:58:13Z | - |
| dc.date.created | 2009-03-27 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/88152 | - |
| dc.publisher | Austin , USA | - |
| dc.relation.isPartOf | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
| dc.relation.isPartOf | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
| dc.title | PBTI and HCI Stress-Induces Trap Generation in SiO2/HfO2 Gate Stack NMOSFETs and its impact on Low Frequency Noise | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008), pp.7 | - |
| dc.citation.conferenceDate | 2008-09-29 | - |
| dc.citation.startPage | 7 | - |
| dc.citation.title | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
| dc.contributor.affiliatedAuthor | 정윤하 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg