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dc.contributor.author정윤하-
dc.date.accessioned2018-06-22T05:00:57Z-
dc.date.available2018-06-22T05:00:57Z-
dc.date.created2009-03-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/88186-
dc.publisherIEEE-
dc.relation.isPartOf2006 IEEE Nanotechnology Materials and Devices Conference-
dc.relation.isPartOf2006 IEEE Nanotechnology Materials and Devices Conference-
dc.titleFabrication of 35-nm Zigzag T-gate Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pHEMTs-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2006 IEEE Nanotechnology Materials and Devices Conference, pp.112 - 113-
dc.citation.conferenceDate2006-10-22-
dc.citation.endPage113-
dc.citation.startPage112-
dc.citation.title2006 IEEE Nanotechnology Materials and Devices Conference-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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