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Characteristics of InP MISFETs with evaporated SiO2 as the gate insulator
- Title
- Characteristics of InP MISFETs with evaporated SiO2 as the gate insulator
- Authors
- 정윤하
- Date Issued
- 1984-01-01
- Publisher
- Japan Society of Applied Physics
- Article Type
- Conference
- Citation
- 39th Spring Meeting of Japan Soc. of Appl. Phys., page. 638, 1984-01-01
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg