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Fabrication of InP MISFETs with evaporated SiO2 as the gate insulator(I)
- Title
- Fabrication of InP MISFETs with evaporated SiO2 as the gate insulator(I)
- Authors
- 정윤하
- Date Issued
- 1984-01-01
- Publisher
- Japan Soc. of Appl. Phys.
- Article Type
- Conference
- Citation
- 31st Spring Meeting of Japan Soc. of Appl. Phys., page. 570, 1984-01-01
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg