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Conference
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dc.contributor.author정윤하-
dc.date.accessioned2018-06-24T12:46:08Z-
dc.date.available2018-06-24T12:46:08Z-
dc.date.created2009-03-27-
dc.date.issued1990-06-25-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/90888-
dc.publisherIEEE-
dc.relation.isPartOfIEEE the 48th Device Research Conference, San Diego, CA, USA-
dc.relation.isPartOfIEEE the 48th Device Research Conference, San Diego, CA, USA-
dc.titleIn-situ MBE-grown Schottky-gate GaAs MESFET-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE the 48th Device Research Conference, San Diego, CA, USA-
dc.citation.conferenceDate1990-06-25-
dc.citation.titleIEEE the 48th Device Research Conference, San Diego, CA, USA-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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