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Hafnium silicate nanolaminate high-k gate dielectric deposited by atomic vapor deposition (ALD)
- Title
- Hafnium silicate nanolaminate high-k gate dielectric deposited by atomic vapor deposition (ALD)
- Authors
- 이시우
- Publisher
- The Asia-Pacific chemical reaction engineering working party
- Article Type
- Conference
- Citation
- The 4th Asia-Pacific Chemical Reaction Engineering Symposium (APCRE'05)
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