INGAAS/GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Abstract

Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room-temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain-induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant.