LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON INP USING SE-DOPED GAAS BUFFER LAYER AND GRATING-PATTERNED SUBSTRATES
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SCOPUS
- Title
- LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON INP USING SE-DOPED GAAS BUFFER LAYER AND GRATING-PATTERNED SUBSTRATES
- Authors
- KIM, DK; AHN, JH; LEE, BT; LEE, HJ; CHA, SS; LIM, KY; KIM, JB; LEE, JL; JANG, SJ; PARK, IS
- Date Issued
- 1995-05-08
- Publisher
- AMER INST PHYSICS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9365
- DOI
- 10.1063/1.113157
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 66, no. 19, page. 2531 - 2533, 1995-05-08
- Files in This Item:
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