Open Access System for Information Sharing

Login Library

 

Article
Cited 4 time in webofscience Cited 0 time in scopus
Metadata Downloads

LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON INP USING SE-DOPED GAAS BUFFER LAYER AND GRATING-PATTERNED SUBSTRATES SCIE SCOPUS

Title
LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON INP USING SE-DOPED GAAS BUFFER LAYER AND GRATING-PATTERNED SUBSTRATES
Authors
KIM, DKAHN, JHLEE, BTLEE, HJCHA, SSLIM, KYKIM, JBLEE, JLJANG, SJPARK, IS
Date Issued
1995-05-08
Publisher
AMER INST PHYSICS
URI
https://oasis.postech.ac.kr/handle/2014.oak/9365
DOI
10.1063/1.113157
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 66, no. 19, page. 2531 - 2533, 1995-05-08
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse