Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

Abstract

The Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor was investigated with the etch depth of an undoped GaAs/AlGaAs cap layer. The contact resistivity decreases from 9.5 x 10(-5) to 2.3 x 10(-6) Omega cm(2) when the contacts were formed on a n-Al0.23Ga0.77As layer by removing the undoped cap layer. X-ray diffraction results show that the good ohmic contact is due to the formation of Au2Al as well as beta-AuGa. Both compounds play a role to create group-III vacancies, followed by the incorporation of Ge into group-III vacancies, namely, creation of free electron below the contact. This results in the considerable elimination of contact resistivity by lowering the effective tunneling barrier. (C) 1997 American Institute of Physics.