DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, DW | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Kang, BS | - |
dc.contributor.author | Noh, TW | - |
dc.contributor.author | Lee, DR | - |
dc.contributor.author | Lee, KB | - |
dc.date.accessioned | 2015-06-25T01:05:09Z | - |
dc.date.available | 2015-06-25T01:05:09Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1999-04-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000000684 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9387 | - |
dc.description.abstract | Growth behaviors of SrTiO3/LaAlO3 films could be varied substantially by controlling terminating atomic layers of the substrates. In a film on the LaO-terminated substrate, strain-induced roughening was observed. In a film on the AlO2-terminated substrate, the first atomic layer of the interface seemed to have lots of defects. However, the stress became quickly relaxed, so a SrTiO3 film could be grown in a layer-by-layer mode after a few monolayers. All these observations could be explained in terms of chemical matching between the atomic layers at the interface. (C) 1999 American Institute of Physics. [S0003-6951(99)01715-5]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1063/1.123792 | - |
dc.author.google | KIM, DW | en_US |
dc.author.google | KIM, DH | en_US |
dc.author.google | LEE, KB | en_US |
dc.author.google | LEE, DR | en_US |
dc.author.google | NOH, TW | en_US |
dc.author.google | KANG, BS | en_US |
dc.relation.volume | 74 | en_US |
dc.relation.issue | 15 | en_US |
dc.relation.startpage | 2176 | en_US |
dc.relation.lastpage | 2178 | en_US |
dc.contributor.id | 10052251 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.74, no.15, pp.2176 - 2178 | - |
dc.identifier.wosid | 000079583000025 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2178 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 2176 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 74 | - |
dc.contributor.affiliatedAuthor | Lee, KB | - |
dc.identifier.scopusid | 2-s2.0-0032607250 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 47 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | YBA2CU3O7-DELTA | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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