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Cited 15 time in webofscience Cited 14 time in scopus
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dc.contributor.authorCho, TS-
dc.contributor.authorDoh, SJ-
dc.contributor.authorJe, JH-
dc.contributor.authorNoh, DY-
dc.date.accessioned2015-06-25T01:05:13Z-
dc.date.available2015-06-25T01:05:13Z-
dc.date.created2009-02-28-
dc.date.issued1999-04-05-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000000676en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9388-
dc.description.abstractWe revealed the existence of epitaxial alpha-Fe2O3 grains in Ba-ferrite thin films on sapphire (001) using synchrotron x-ray scattering. The antiferromagnetic alpha-Fe2O3 grains were formed during the crystallization of amorphous Ba-ferrite films grown on sapphire (001) by radio frequency sputtering deposition. The crystal domain size of the alpha-Fe2O3 grains was about 250 Angstrom in the film plane, similar to that of the Ba-ferrite grains. The in-plane crystalline axis of the alpha-Fe2O3 was aligned to that of sapphire, while the Ba-ferrite film was rotated by 30 degrees in the film plane. We confirm that the existence of these antiferromagnetic alpha-Fe2O3 grains greatly degraded magnetic properties of the Ba-ferrite films. (C) 1999 American Institute of Physics. [S0003-6951(99)03414-2].-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleMicrostructure of epitaxial alpha-Fe2O3 grains in Ba-ferrite thin films grown on sapphire (001)-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.123753-
dc.author.googleCHO, TSen_US
dc.author.googleDOH, SJen_US
dc.author.googleNOH, DYen_US
dc.author.googleJE, JHen_US
dc.relation.volume74en_US
dc.relation.issue14en_US
dc.relation.startpage2050en_US
dc.relation.lastpage2052en_US
dc.contributor.id10123980en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.74, no.14, pp.2050 - 2052-
dc.identifier.wosid000079483300040-
dc.date.tcdate2019-01-01-
dc.citation.endPage2052-
dc.citation.number14-
dc.citation.startPage2050-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume74-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0032621461-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc15-
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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