DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:05:17Z | - |
dc.date.available | 2015-06-25T01:05:17Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1999-02-22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000000620 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9389 | - |
dc.description.abstract | The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface. (C) 1999 American Institute of Physics. [S0003-6951(99)00808-6]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.123458 | - |
dc.author.google | CHOI, KJ | en_US |
dc.author.google | LEE, JL | en_US |
dc.relation.volume | 74 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | 1108 | en_US |
dc.relation.lastpage | 1110 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.74, no.8, pp.1108 - 1110 | - |
dc.identifier.wosid | 000078685700018 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1110 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1108 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 74 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0001455870 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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