Open Access System for Information Sharing

Login Library

 

Article
Cited 23 time in webofscience Cited 25 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
DC FieldValueLanguage
dc.contributor.authorChon, U-
dc.contributor.authorKim, KB-
dc.contributor.authorJang, HM-
dc.date.accessioned2015-06-25T01:06:31Z-
dc.date.available2015-06-25T01:06:31Z-
dc.date.created2009-02-28-
dc.date.issued2001-10-08-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000002235en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9408-
dc.description.abstractDegradation mechanism of ferroelectric properties in the Pt/Bi4-xLaxTi3O12/Pt (Pt/BLT/Pt) capacitors during forming gas annealing (FGA) was systematically investigated by examining ferroelectric responses and spatial distributions of relevant species using secondary ion mass spectrometry. It was shown that the degradation of ferroelectric properties during FGA was not originated from the oxygen loss induced by a reducing atmosphere but was mainly caused by protons catalytically dissociated from molecular hydrogen (H-2) by the top Pt electrode. The following sequential mechanism has been identified from the present study: (i) the adsorption and dissociation of H-2 to produce protons and electrons by the top Pt electrode, (ii) the columnar penetration of protons into the BLT film, accelerated by the region of negatively charged Bi-site vacancies near the bottom electrode, and (iii) the decomposition of perovskite phase after FGA at 400 degreesC. (C) 2001 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleDegradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1402640-
dc.author.googleChon, Uen_US
dc.author.googleKim, KBen_US
dc.author.googleJang, HMen_US
dc.relation.volume79en_US
dc.relation.issue15en_US
dc.relation.startpage2450en_US
dc.relation.lastpage2452en_US
dc.contributor.id10084272en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.79, no.15, pp.2450 - 2452-
dc.identifier.wosid000171359100048-
dc.date.tcdate2019-01-01-
dc.citation.endPage2452-
dc.citation.number15-
dc.citation.startPage2450-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume79-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-0035828612-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc23-
dc.type.docTypeArticle-
dc.subject.keywordPlusHYDROGEN-INDUCED DEGRADATION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusTI)O-3 CAPACITORS-
dc.subject.keywordPlusELECTRODE-
dc.subject.keywordPlusDAMAGE-
dc.subject.keywordPlusPB(ZR,TI)O-3-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusRECOVERY-
dc.subject.keywordPlusBARRIERS-
dc.subject.keywordPlusDEVICE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
Read more

Views & Downloads

Browse