Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
SCIE
SCOPUS
- Title
- Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
- Authors
- Shannigrahi, SR; Jang, HM
- Date Issued
- 2001-08-13
- Publisher
- AMER INST PHYSICS
- Abstract
- The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P-r) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 degreesC by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5x10(10) switching cycles, a quite stable charge retention profile with time, and comparatively high P-r values, all of which assure their suitability for practical FRAM applications. (C) 2001 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9413
- DOI
- 10.1063/1.1392970
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 79, no. 7, page. 1051 - 1053, 2001-08-13
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