Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'
SCIE
SCOPUS
- Title
- Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'
- Authors
- Jeon, CM; Lee, JL
- Date Issued
- 2003-12-22
- Publisher
- AMER INST PHYSICS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9439
- DOI
- 10.1063/1.1634694
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 83, no. 25, page. 5321 - 5321, 2003-12-22
- Files in This Item:
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