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Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing' SCIE SCOPUS
- Title
- Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'
- Date Issued
- 2003-12-22
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 83, no. 25, page. 5321 - 5321, 2003-12-22
- Files in This Item:
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg