DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, MH | - |
dc.contributor.author | Lee, HJ | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Kim, KT | - |
dc.date.accessioned | 2015-06-25T01:08:51Z | - |
dc.date.available | 2015-06-25T01:08:51Z | - |
dc.date.created | 2009-08-21 | - |
dc.date.issued | 2003-09-15 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000003666 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9444 | - |
dc.description.abstract | The microwave distribution inside a rectangular stack (15 mumx0.72 mumx60 nm) of Bi2Sr2CaCu2O8+x intrinsic Josephson junctions (IJJs) was studied. The stack was microfabricated into a transmission-line geometry, with a-few-hundred-nm-thick Au layers deposited on the top and bottom of the stack. The microwave distribution was monitored by measuring the anomalous suppression of the tunneling critical current of the IJJs with varied microwave power at frequencies in the W band. This technique can provide valuable information on the microwave transmission modes inside the sandwiched stack of IJJs, which is utterly important for the high-frequency device applications using IJJs, such as fluxon-flow THz oscillators. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Microwave distribution in stacked Bi2Sr2CaCu2O8+x intrinsic Josephson junctions in a transmission-line geometry | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1063/1.1610258 | - |
dc.author.google | Bae, MH | en_US |
dc.author.google | Lee, HJ | en_US |
dc.author.google | Kim, KT | en_US |
dc.author.google | Kim, J | en_US |
dc.relation.volume | 83 | en_US |
dc.relation.issue | 11 | en_US |
dc.relation.startpage | 2187 | en_US |
dc.relation.lastpage | 2189 | en_US |
dc.contributor.id | 10080084 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.83, no.11, pp.2187 - 2189 | - |
dc.identifier.wosid | 000185231000033 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2189 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2187 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 83 | - |
dc.contributor.affiliatedAuthor | Lee, HJ | - |
dc.identifier.scopusid | 2-s2.0-0142026378 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 21 | - |
dc.description.scptc | 22 | * |
dc.date.scptcdate | 2018-06-152 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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