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dc.contributor.authorBae, MH-
dc.contributor.authorLee, HJ-
dc.contributor.authorKim, J-
dc.contributor.authorKim, KT-
dc.date.accessioned2015-06-25T01:08:51Z-
dc.date.available2015-06-25T01:08:51Z-
dc.date.created2009-08-21-
dc.date.issued2003-09-15-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000003666en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9444-
dc.description.abstractThe microwave distribution inside a rectangular stack (15 mumx0.72 mumx60 nm) of Bi2Sr2CaCu2O8+x intrinsic Josephson junctions (IJJs) was studied. The stack was microfabricated into a transmission-line geometry, with a-few-hundred-nm-thick Au layers deposited on the top and bottom of the stack. The microwave distribution was monitored by measuring the anomalous suppression of the tunneling critical current of the IJJs with varied microwave power at frequencies in the W band. This technique can provide valuable information on the microwave transmission modes inside the sandwiched stack of IJJs, which is utterly important for the high-frequency device applications using IJJs, such as fluxon-flow THz oscillators. (C) 2003 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleMicrowave distribution in stacked Bi2Sr2CaCu2O8+x intrinsic Josephson junctions in a transmission-line geometry-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.1610258-
dc.author.googleBae, MHen_US
dc.author.googleLee, HJen_US
dc.author.googleKim, KTen_US
dc.author.googleKim, Jen_US
dc.relation.volume83en_US
dc.relation.issue11en_US
dc.relation.startpage2187en_US
dc.relation.lastpage2189en_US
dc.contributor.id10080084en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.83, no.11, pp.2187 - 2189-
dc.identifier.wosid000185231000033-
dc.date.tcdate2019-01-01-
dc.citation.endPage2189-
dc.citation.number11-
dc.citation.startPage2187-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume83-
dc.contributor.affiliatedAuthorLee, HJ-
dc.identifier.scopusid2-s2.0-0142026378-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc21-
dc.description.scptc22*
dc.date.scptcdate2018-06-152*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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