Analog Figure-of-Merits Comparison of Gate Workfunction Variability and Random Discrete Dopant Between Inversion-Mode and Junctionless Nanowire FETs

Abstract

The analog figure-of-merits (FOMs) of conventional inversion-mode (IM) and junctionless (JL) NanoWire Field Effect Transistor (NWFET) have been investigated, considering the gate WorkFunction Variability (WFV) and Random Discrete Dopant (RDD) using 3-dimensional (3D) TCAD simulation. While the JL-NWFET shows higher immune to WFV on analog FOMs, it can be easily affected by RDD due to higher channel doping level. On the other hand, the IM-NWFET shows stronger correlation between transconductance (g(m)) and gate capacitance (C-gg), leading to similar variation in cut-off frequency (f(t)) even though it shows larger g(m) and C-gg variation compared to JL-NWFET.