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Cited 124 time in webofscience Cited 125 time in scopus
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dc.contributor.authorWi, SC-
dc.contributor.authorKang, JS-
dc.contributor.authorKim, JH-
dc.contributor.authorCho, SB-
dc.contributor.authorKim, BJ-
dc.contributor.authorYoon, S-
dc.contributor.authorSuh, BJ-
dc.contributor.authorHan, SW-
dc.contributor.authorKim, KH-
dc.contributor.authorKim, KJ-
dc.contributor.authorKim, BS-
dc.contributor.authorSong, HJ-
dc.contributor.authorShin, HJ-
dc.contributor.authorShim, JH-
dc.contributor.authorMin, BI-
dc.date.accessioned2015-06-25T01:10:42Z-
dc.date.available2015-06-25T01:10:42Z-
dc.date.created2009-02-28-
dc.date.issued2004-05-24-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000004242en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9473-
dc.description.abstractElectronic structures of homogeneous bulk samples of Zn0.9Co0.1O which do not exhibit diluted ferromagnetic semiconducting (DMS) behavior have been investigated using photoemission spectroscopy and x-ray absorption spectroscopy. We have found that the Co ions in Zn1-xCoxO are in the divalent Co2+(d(7)) states under the tetrahedral symmetry. Our finding indicates that the DMS properties will not be produced when Co ions are properly substituted for Zn sites, implying that the DMS properties observed in Zn1-xCoxO thin films are likely to be extrinsic. (C) 2004 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleElectronic structure of Zn1-xCoxO using photoemission and x-ray absorption spectroscopy-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.1756197-
dc.author.googleWi, SCen_US
dc.author.googleKang, JSen_US
dc.author.googleMin, BIen_US
dc.author.googleShim, JHen_US
dc.author.googleShin, HJen_US
dc.author.googleSong, HJen_US
dc.author.googleKim, BSen_US
dc.author.googleKim, KJen_US
dc.author.googleKim, KHen_US
dc.author.googleHan, SWen_US
dc.author.googleSuh, BJen_US
dc.author.googleYoon, Sen_US
dc.author.googleKim, BJen_US
dc.author.googleCho, SBen_US
dc.author.googleKim, JHen_US
dc.relation.volume84en_US
dc.relation.issue21en_US
dc.relation.startpage4233en_US
dc.relation.lastpage4235en_US
dc.contributor.id10069852en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.84, no.21, pp.4233 - 4235-
dc.identifier.wosid000221404700032-
dc.date.tcdate2019-01-01-
dc.citation.endPage4235-
dc.citation.number21-
dc.citation.startPage4233-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume84-
dc.contributor.affiliatedAuthorMin, BI-
dc.identifier.scopusid2-s2.0-2942666197-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc112-
dc.description.scptc110*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusDILUTED MAGNETIC SEMICONDUCTOR-
dc.subject.keywordPlusTRANSITION-METAL COMPOUNDS-
dc.subject.keywordPlusDOPED ZNO-
dc.subject.keywordPlusTHIN-FILMS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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