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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Baik, JM | - |
| dc.contributor.author | Shon, Y | - |
| dc.contributor.author | Kang, TW | - |
| dc.contributor.author | Lee, JL | - |
| dc.date.accessioned | 2015-06-25T01:11:05Z | - |
| dc.date.available | 2015-06-25T01:11:05Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2004-02-16 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000004021 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9479 | - |
| dc.description.abstract | N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases. (C) 2004 American Institute of Physics. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.1647282 | - |
| dc.author.google | Baik, JM | en_US |
| dc.author.google | Shon, Y | en_US |
| dc.author.google | Lee, JL | en_US |
| dc.author.google | Kang, TW | en_US |
| dc.relation.volume | 84 | en_US |
| dc.relation.issue | 7 | en_US |
| dc.relation.startpage | 1120 | en_US |
| dc.relation.lastpage | 1122 | en_US |
| dc.contributor.id | 10105416 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.84, no.7, pp.1120 - 1122 | - |
| dc.identifier.wosid | 000188880000031 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 1122 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 1120 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 84 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.identifier.scopusid | 2-s2.0-1542469554 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 31 | - |
| dc.description.scptc | 33 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
| dc.subject.keywordPlus | (GA,MN)N | - |
| dc.subject.keywordPlus | NITRIDE | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg