DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Y | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Park, YD | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Hwang, M | - |
dc.contributor.author | Cho, KW | - |
dc.date.accessioned | 2015-06-25T01:11:48Z | - |
dc.date.available | 2015-06-25T01:11:48Z | - |
dc.date.created | 2009-08-25 | - |
dc.date.issued | 2005-10-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005454 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9490 | - |
dc.description.abstract | The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm(2)/V s). (C) 2005 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2093940 | - |
dc.author.google | Jang, Y | en_US |
dc.author.google | Kim, DH | en_US |
dc.author.google | Cho, KW | en_US |
dc.author.google | Hwang, M | en_US |
dc.author.google | Cho, JH | en_US |
dc.author.google | Park, YD | en_US |
dc.relation.volume | 87 | en_US |
dc.relation.issue | 15 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.87, no.15 | - |
dc.identifier.wosid | 000232442200041 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 15 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 87 | - |
dc.contributor.affiliatedAuthor | Cho, KW | - |
dc.identifier.scopusid | 2-s2.0-28344436104 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 55 | - |
dc.description.scptc | 67 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GATE INSULATORS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | FET | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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