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Cited 239 time in webofscience Cited 271 time in scopus
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dc.contributor.authorLee, D-
dc.contributor.authorKim, MG-
dc.contributor.authorRyu, S-
dc.contributor.authorJang, HM-
dc.contributor.authorLee, SG-
dc.date.accessioned2015-06-25T01:12:10Z-
dc.date.available2015-06-25T01:12:10Z-
dc.date.created2009-02-28-
dc.date.issued2005-05-30-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000005158en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9496-
dc.description.abstractEffects of the La modification on the structure and magnetoferroelectric properties of BiFeO3 (BFO)-based films were examined. On SrTiO3 (001) planes, all the BFO-based films (for x between 0 and 0.15 in Bi1-xLaxFeO3 with the film thickness of 300 nm) were grown epitaxially along [001] direction of tetragonal symmetry. However, the La modification gradually changes the film structure from a monoclinically tilted state to a nontilted tetragonal-like state. Both extended x-ray absorption fine structure and x-ray absorption near edge structure spectra revealed the presence of a strong in-plane compressive stress. Room-temperature magnetization-field curves indicated that the saturation magnetization of these BFO-based epitaxial films increased with the degree of La modification. La-modified BFO film capacitors fabricated on SrRuO3-buffered SrTiO3 (001) substrates showed fatigue-free ferroelectric switching characteristics up to 4x10(10) read/write cycles at a frequency of 1 MHz. (c) 2005 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEpitaxially grown la-modified BiFeO3 magnetoferroelectric thin films-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1941474-
dc.author.googleLee, Den_US
dc.author.googleKim, MGen_US
dc.author.googleLee, SGen_US
dc.author.googleJang, HMen_US
dc.author.googleRyu, Sen_US
dc.relation.volume86en_US
dc.relation.issue22en_US
dc.contributor.id10084272en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.86, no.22-
dc.identifier.wosid000229590100055-
dc.date.tcdate2019-01-01-
dc.citation.number22-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume86-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-20844441189-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc193-
dc.description.scptc233*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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